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Photoluminescence intensity enhancement in self-assembled InAs quantum dots grown on (3 1 1)B and (100) GaAs substrates and coated with gold nanoparticles

Identifieur interne : 000724 ( Main/Repository ); précédent : 000723; suivant : 000725

Photoluminescence intensity enhancement in self-assembled InAs quantum dots grown on (3 1 1)B and (100) GaAs substrates and coated with gold nanoparticles

Auteurs : RBID : Pascal:13-0332478

Descripteurs français

Pascal (Inist)
- Photoluminescence, Autoassemblage, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Point quantique, Nanomatériau, Or, Nanoparticule, Plasmon surface, Dépendance température, Effet température, Arséniure de gallium, Epaisseur couche, Morphologie, Substrat GaAs, 7867, 8116D, 8107T, 8535B.
Wicri :
- concept : Or.

English descriptors

KwdEn :
- Gallium arsenides, Gold, III-V compound, III-V semiconductors, Indium arsenides, Layer thickness, Morphology, Nanoparticles, Nanostructured materials, Photoluminescence, Quantum dots, Self-assembly, Surface plasmons, Temperature dependence, Temperature effects.

Abstract

Photoluminescence intensity enhancement has been observed for self-assembled InAs quantum dots (QDs) coated with gold nanoparticles and associated to surface plasmon (SP) coupling effects. This effect was investigated for different temperatures, excitation energy, laser power, GaAs cap layer thickness, and QD morphology. It was found that the SP-QD coupling efficiency increases with the increase of the temperature. It was also observed that this effect is enhanced for QDs grown on (311)B GaAs oriented substrates. .

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Pascal:13-0332478

Le document en format XML

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<author><name sortKey="Khatab, A" uniqKey="Khatab A">A. Khatab</name>
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<country>Égypte</country>
<wicri:noRegion>National Institute of Laser Enhanced Sciences, Cairo University</wicri:noRegion>
</affiliation>
<affiliation wicri:level="4"><inist:fA14 i1="02"><s1>School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Center, University of Nottingham</s1>
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<region type="nation">Angleterre</region>
<region type="région" nuts="1">Nottinghamshire</region>
</placeName>
<orgName type="university">Université de Nottingham</orgName>
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</author>
<author><name sortKey="Lemine, O M" uniqKey="Lemine O">O. M. Lemine</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, College of Sciences, Al Imam Mohammad Bin Saoud Islamic University (IMSIU), Riyadh</s1>
<s2>11623 Riyadh</s2>
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<author><name sortKey="Alkaoud, A" uniqKey="Alkaoud A">A. Alkaoud</name>
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<author><name sortKey="Falamas, A" uniqKey="Falamas A">A. Falamas</name>
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<author><name sortKey="Aziz, M" uniqKey="Aziz M">M. Aziz</name>
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<orgName type="university">Université de Nottingham</orgName>
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<author><name sortKey="Galvao Gobato, Y" uniqKey="Galvao Gobato Y">Y. Galvao Gobato</name>
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<country>Brésil</country>
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<author><name sortKey="Henini, M" uniqKey="Henini M">M. Henini</name>
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<title level="j" type="abbreviated">Physica ( E) low-dimens.  syst.  nanostrut.</title>
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<term>III-V compound</term>
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<term>Indium arsenides</term>
<term>Layer thickness</term>
<term>Morphology</term>
<term>Nanoparticles</term>
<term>Nanostructured materials</term>
<term>Photoluminescence</term>
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<term>Self-assembly</term>
<term>Surface plasmons</term>
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<term>Effet température</term>
<term>Arséniure de gallium</term>
<term>Epaisseur couche</term>
<term>Morphologie</term>
<term>Substrat GaAs</term>
<term>7867</term>
<term>8116D</term>
<term>8107T</term>
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<front><div type="abstract" xml:lang="en">Photoluminescence intensity enhancement has been observed for self-assembled InAs quantum dots (QDs) coated with gold nanoparticles and associated to surface plasmon (SP) coupling effects. This effect was investigated for different temperatures, excitation energy, laser power, GaAs cap layer thickness, and QD morphology. It was found that the SP-QD coupling efficiency increases with the increase of the temperature. It was also observed that this effect is enhanced for QDs grown on (311)B GaAs oriented substrates. .</div>
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<fC01 i1="01" l="ENG"><s0>Photoluminescence intensity enhancement has been observed for self-assembled InAs quantum dots (QDs) coated with gold nanoparticles and associated to surface plasmon (SP) coupling effects. This effect was investigated for different temperatures, excitation energy, laser power, GaAs cap layer thickness, and QD morphology. It was found that the SP-QD coupling efficiency increases with the increase of the temperature. It was also observed that this effect is enhanced for QDs grown on (311)B GaAs oriented substrates. .</s0>
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Photoluminescence intensity enhancement in self-assembled InAs quantum dots grown on (3 1 1)B and (100) GaAs substrates and coated with gold nanoparticles

Photoluminescence intensity enhancement in self-assembled InAs quantum dots grown on (3 1 1)B and (100) GaAs substrates and coated with gold nanoparticles

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri